Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Characteristics of $TiN/TiSi_2$ bilayer by $BF_2$ dopant at Si substrate

기판 실리콘의 $BF_2$ 불순물 원자에 의한 $TiN/TiSi_2$ bilayer의 특성

  • Lee, C.J. (Department of Electrical Eng. Korea University) ;
  • Park, J.S. (Department of Electrical Eng. Korea University) ;
  • You, H.S. (Department of Electrical Eng. Korea University) ;
  • Sung, Y.K. (Department of Electrical Eng. Korea University)
  • Published : 1992.07.23
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Abstract

The $TiN/TiSi_2$ bilayer has been studied for contact barrier layer at ULSI recently. The $TiN/TiSi_2$ bilayer was formed by RTA in $NH_3$ ambient simultaneously after the Ti film was deposited on silicon substrate. In this paper, properties of $TiN/TiSi_2$ bilayer was evaluated according to $BF_2$ dopant concentration and dopant redistribution in $TiN/TiSi_2$ bilayer was also analyzed. In this experiment, the composition and structure of $TiN/TiSi_2$ bilayer were constant even though dopant concentration increased but silicide growth rate decreased. Boron atoms were redistributed within TiN film and at $TiSi_2Si$ interface during the bilayer formation.

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