대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1992년도 하계학술대회 논문집 B
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- Pages.820-824
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- 1992
얇은 박막 SOI (Silicon-On-Insulator) MOSFET 에서의 소자 변수 추출 방법
A Device Parameter Extraction Method for Thin Film SOI MOSFETs
- Park, Sung-Kye (Dept. of Elee. Eng., KAIST) ;
- Kim, Choong-Ki (Dept. of Elee. Eng., KAIST)
- 발행 : 1992.07.23
초록
An accurate method for extracting both Si film doping concentration and front or back silicon-to-oxide fixed charge density of fully depleted SOI devices is proposed. The method utilizes the current-to-voltage and capacitance-to-voltage characteristics of both SOI NMOSFET and PMOSFET which have the same doping concentration. The Si film doping concentration and the front or back silicon-to-oxide fixed charge density are extracted by mainpulating the respective threshold voltages of the SOI NMOSFET and PMOSFET according to the back surface condition (accumulation or inversion) and the capacitance-to-voltage characteristics of the SOI PMOSFET. Device simulations show that the proposed method has less than 10% errors for wide variations of the film doping concentration and the front or the back silicon-to-oxide fixed charge density.
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