A Device Parameter Extraction Method for Thin Film SOI MOSFETs

얇은 박막 SOI (Silicon-On-Insulator) MOSFET 에서의 소자 변수 추출 방법

An accurate method for extracting both Si film doping concentration and front or back silicon-to-oxide fixed charge density of fully depleted SOI devices is proposed. The method utilizes the current-to-voltage and capacitance-to-voltage characteristics of both SOI NMOSFET and PMOSFET which have the same doping concentration. The Si film doping concentration and the front or back silicon-to-oxide fixed charge density are extracted by mainpulating the respective threshold voltages of the SOI NMOSFET and PMOSFET according to the back surface condition (accumulation or inversion) and the capacitance-to-voltage characteristics of the SOI PMOSFET. Device simulations show that the proposed method has less than 10% errors for wide variations of the film doping concentration and the front or the back silicon-to-oxide fixed charge density.