A Device Parameter Extraction Method for Thin Film SOI MOSFETs

얇은 박막 SOI (Silicon-On-Insulator) MOSFET 에서의 소자 변수 추출 방법

  • 박성계 (한국 과학 기술원, 전기및 전자과) ;
  • 김충기 (한국 과학 기술원, 전기및 전자과)
  • Published : 1992.07.23

Abstract

An accurate method for extracting both Si film doping concentration and front or back silicon-to-oxide fixed charge density of fully depleted SOI devices is proposed. The method utilizes the current-to-voltage and capacitance-to-voltage characteristics of both SOI NMOSFET and PMOSFET which have the same doping concentration. The Si film doping concentration and the front or back silicon-to-oxide fixed charge density are extracted by mainpulating the respective threshold voltages of the SOI NMOSFET and PMOSFET according to the back surface condition (accumulation or inversion) and the capacitance-to-voltage characteristics of the SOI PMOSFET. Device simulations show that the proposed method has less than 10% errors for wide variations of the film doping concentration and the front or the back silicon-to-oxide fixed charge density.

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