Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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A Calculation of C-V characteristics for HgCdTe Semiconductor material

HgCdTe 반도체 재료의 C-V 특성 계산

  • 이상돈 (한양대학교 전기공학과) ;
  • 강형부 (한양대학교 전기공학과) ;
  • 김봉흡 (한양대학교 전기공학과) ;
  • 김동호 (국방과학연구소 기술연구본부) ;
  • 김재묵 (국방과학연구소 기술연구본부)
  • Published : 1992.07.23
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Abstract

Accurate Capacitance-Voltage characteristics of Metal-Insulator-Semiconductor (MIS) devices in narrow band-gap semiconductors are presented. The unique band structure of narrow band-gap semiconductors is taken into account such as non-parabolicity and degeneracy. Compensated and partially ionized impurities either in the bulk or the space charge region are also considered. HgCdTe is a defect semiconductor, so this approach is very important for characterization and analysis of MIS devices.

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