대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1992년도 하계학술대회 논문집 B
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- Pages.801-802
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- 1992
다결정 실리콘 박막트랜지스터의 누설전류 해석
Analysis of the Leakage Current in Poly Si TFTs
- Lee, In-Chan (Dept. of Electrical Eng., Gyeongsang Nat'l Univ.) ;
- Ma, Tae-Young (Dept. of Electrical Eng., Gyeongsang Nat'l Univ.) ;
- kim, Sang-Hyun (Dept. of Electrical Eng., Gyeongsang Nat'l Univ.)
- 발행 : 1992.07.23
초록
Poly Si TFTs have been fabricated from low temperature annealed a-Si films. I-V and C-V characteristics in the off-state region were measured. Analytical model for the leakage current in the off-state was suggested. In the measurement, capacitance increased abruptly with Increasing gate and drain voltage. This phenomena is attributed to the leakage current.
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