Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1992.07b
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- Pages.801-802
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- 1992
Analysis of the Leakage Current in Poly Si TFTs
다결정 실리콘 박막트랜지스터의 누설전류 해석
- Lee, In-Chan (Dept. of Electrical Eng., Gyeongsang Nat'l Univ.) ;
- Ma, Tae-Young (Dept. of Electrical Eng., Gyeongsang Nat'l Univ.) ;
- kim, Sang-Hyun (Dept. of Electrical Eng., Gyeongsang Nat'l Univ.)
- Published : 1992.07.23
Abstract
Poly Si TFTs have been fabricated from low temperature annealed a-Si films. I-V and C-V characteristics in the off-state region were measured. Analytical model for the leakage current in the off-state was suggested. In the measurement, capacitance increased abruptly with Increasing gate and drain voltage. This phenomena is attributed to the leakage current.
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