한국광학회:학술대회논문집 (Proceedings of the Optical Society of Korea Conference)
- 한국광학회 1991년도 제6회 파동 및 레이저 학술발표회 Prodeedings of 6th Conference on Waves and Lasers
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- Pages.135-138
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- 1991
평면형 GaInAs/InP PIN Photodiode 제작 및 특성
Fabrication of planar type GaInAs PIN photodiode and its characteristics
초록
A planar type PIN photodiode has been fabricated and discussed. We used OMVPE systems to grow the structure of u-InP/u-InP/n-InP. P-n junction was formed by Zn-diffusion method at 50
키워드