Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1991.07a
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- Pages.162-165
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- 1991
OXYGEN BEHAVIRO IN SILICON CRYSTAL ANNEALED THROUGH THE SIMULATED THERMAL CYCLE
SIMULATED THERMAL CYCLE로 열처리된 규소 단결정내의 산소 거동
- Suh, Dong-Suk (Lucky Advanced Materials Incorporation) ;
- Kwon, Bong-Soo (Lucky Advanced Materials Incorporation) ;
- Kim, Young-Gyu (Lucky Advanced Materials Incorporation) ;
- Choi, Byung-Ho (Kum-Ho Institute of Technology) ;
- Park, Jae-Woo (Kum-Ho Institute of Technology)
- Published : 1991.07.18
Abstract
Oxygen behaviors in CZ-silicon wafer, grown by the Lucky Advanced Materials Inc. that is a pioneer of silicon material industries in Korea, were investigated to simulate effects on the device performance of oxygen, neglecting the effect of other impurity content, defects and thermal history. Silicon wafers were annealed through simulated 16K SRAM thermal cycle. As initial oxygen concentration increased up to 16.7ppma the amount of oxygen precipitation increased up to 10.6ppma and the bulk microdefect density increased up to
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