Proceedings of the Optical Society of Korea Conference (한국광학회:학술대회논문집)
- 1990.02a
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- Pages.211-214
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- 1990
Investigation of compound semiconductor
레이저를 이용한 화합물 반도체 연구
Abstract
Investigation of GaAs/AlGaAs QW carried out by using PL and Absorption spectroscopy. In order to get high resolution (0.76meV) and low noise, proper experimental system was set-up. From measurements, we have deduced the properties of GaAs/AlGaAs QW, such as the residual impurity, well thickness, crystal quality, interface abruptness and well thickness uniformity. Also we can obtain other properties such as sub-band absorption by using Absorption Spectroscopy.
Keywords