Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1990.07a
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- Pages.439-442
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- 1990
GaAs MESFETs with the submicronmeter gate length
$1{\mu}m$ 이하의 게이트 길이를 갖는 GaAs MESFET
- Cho, H.R. (Dept. of EE, KAIST) ;
- Kwon, Y.S. (Dept. of EE, KAIST)
- Published : 1990.07.05
Abstract
GaAs MESFETs with the submicron gat are fabricated.
Keywords