Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1990.07a
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- Pages.257-260
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- 1990
Electron Transport Characterization Including L Valley at High Field
실리콘의 L valley를 고려한 강한 전계에서 전자 수송의 특성
- Rhee, Jun-Koo (Dept. of Electrical Eng., Seoul National Univ.) ;
- Park, Young-June (Dept. of Electronics Eng., Seoul National Univ.) ;
- Han, Min-Koo (Dept. of Electrical Eng., Seoul National Univ.)
- Published : 1990.07.05
Abstract
Monte Carlo simulations of electron impact ionization in silicon utilizing simple spherical band approximation including L valley are presented. The mean energy of electron at high electric field is lowered and the threshold energy of electron impact ionizaiotn is smeared out to
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