대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1990년도 하계학술대회 논문집
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- Pages.250-253
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- 1990
GaAs on Si결정(結晶)의 성장(成長)과 그 특성해석(特性解析)
Analysis and Growth of GaAs on Si
- Jeong, Se-Jin (Dept. of Electrical Eng. Korea University) ;
- Sung, Han-Young (Dept. of Electrical Eng. Korea University)
- 발행 : 1990.07.05
초록
A single-crystalline epitaxial film of GaAs has been grown on Si using an ionized cluster beam technique. The native oxide layer on the silicon substrate was removed at
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