$RuO_2$계 후막저항체의 교류 임피던스특성

A.C. Impedance Properties on $RuO_2$-Based Thick Film Resistors.

  • 구본급 (한국과학기술원, 재료공학과) ;
  • 김호기 (한국과학기술원, 재료공학과)
  • Koo, Bon-Keup (Department of Materials Science and Engineering, KAIST) ;
  • Kim, Ho-Gi (Department of Materials Science and Engineering, KAIST)
  • 발행 : 1990.07.05

초록

A.C. impedance properties of $RuO_2$ based thick film resistors which having different resistivity value (DuPont 1721 : $100{\Omega}$/ sq., 1741 : $10K{\Omega}$/sq.) were investigated using by impedance analyzer. In case of lower resistivity 1721 system, the complex impedance was composed nearly R component for all speciman sintered at above $600^{\circ}C$, and the frequency dependancy on impedance was not affected very much up to 5MHz and again gradually increase with increasing the frequency. In case of higher resistivity 1741 resistor system, impedance properties were very depandant on sintering temperature. When sintering temperature was $600^{\circ}C$, the complex impedance plot shows a vertical line, which correspond to lone capacitance equivalant circuit, and the impedance linearly decreased with increasing frequency. In case of speciman sintered at $700-900^{\circ}C$, the complex impedance plot shows semi-circular are correspond to a lumped RC combination, and the impedance shows constant value to 5MHz, again decreased with increasing frequency. But the complex impedance behavior of speciman sintered at $1000^{\circ}C$ was shows the equivalent circuit correspont to parallel combined LCR component, and the impedance was not varied with frequency.

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