An Experimental Study on the Mechanisms of Meltback and Regrowth

용액식각후 재결정성장의 기구에 대한 실험적 고찰

  • 함성호 (한국과학기술원 전기및전자공학과) ;
  • 유태경 (금성사 중앙연구소) ;
  • 조규석 (한국과학기술원 전기및전자공학과) ;
  • 권영세 (한국과학기술원 전기및전자공학과)
  • Published : 1989.11.25

Abstract

The mechanisms of the meltback etching and regrowth processes are studied experimentally. The method to reduce the anisotropy and elliminate the gallium islands in the processes are developed. It is possible to fabricate the GaAs optical devices by the use of the process.

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