MIS diodes의 컨덕턴스법에 관한 광조사 효과

A STUDY ON THE RADIATION EFFETS OF MIS DIODES BY CONDUCTANCE TECH

Recently nitrided oxides have been investigated for the application as the replacement of thermally grown oxides in the MIS devices. In this paper, nitrided oxides which were treated by the $N_2$ plasma were fabricated with the 350 $^{\circ}C$ substrate temperature, 0.2 torr chamber pressure, 250 watt RF power, 60 seem $N_2$ flow rate, 30 mins treatment time. After the UV light is radiated on the sample, it is noticed that the interface state density, $N_{ss}$, is slightly decreased. Under the UV light, the samples are stress by $\pm$DC bias. After those treatment interface state density. $N_{ss}$, is increased.