대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1989년도 추계학술대회 논문집 학회본부
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- Pages.79-82
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- 1989
레이저 CVD를 이용한 GaAs/GaAs 및 GaAs/Si 결정성장연구
Epitaxial Growth of GaAs/GaAs and GaAs/Si by LCVD
- Choi, W.L. (Dept. of Electrical Eng., POSTECH) ;
- Ku, J.K. (Dept. of Chemistry, POSTECH) ;
- Chung, J.W. (Dept. of Physics, POSTECH) ;
- Kwon, O. (Dept. of Electrical Eng., POSTECH)
- 발행 : 1989.11.25
초록
We studied the epitaxial growth of GaAs/GaAs and GaAs/Si by Laser CVD with 193nm ArF pulsed excimer laser. The source gases of TMGa and AsC13 or TMGa-TMAs adducts are mixed with H2, and photolyzed above the substrate which is heated up to around 300
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