LPE에 있어서 InP 기판의 열손상 상태와 Melt Back 특성

Thermal Damages and Melt Back Characteristics of InP Substrate in the LPE Growth

It has been that, above $600^{\circ}C$, a cover crystal is essential for protecting InP substrate from severe gas etching during soaking procedure and shown that the melt back rate of substrate crystal in In solvent is about 0.90${\mu}{\textrm}{m}$/sec at 635$^{\circ}C$, 0.57${\mu}{\textrm}{m}$/sec at 615$^{\circ}C$ and 0.37${\mu}{\textrm}{m}$/sec at 595$^{\circ}C$.