한국광학회:학술대회논문집 (Proceedings of the Optical Society of Korea Conference)
- 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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- Pages.196-200
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- 1989
고속 장파장 광통신을 위한 GaInAs/InP PIN 광검출기의 제작 및 응용특성
Fabrication and application performance of the GaInAs/InP PIN photodiode for the light-wave communication
초록
The physical properties related to the GaInAs/InP crystal grown by LPE are discussed in terms of both the design and operation characteristics of the GaInAs/InP Pin photodiode has cutoff frequency of 358 MHz and responsivity, 0.53 A/W (λ=1.3
키워드