GaAs OEIC Unit Processes for chip-to-chip Interconnection II (LD structure ; integration)

칩상호 광접속용 GaAs 광전집적회로의 기본 공정 II (LD 구조 ; 집적화 연구)

It is shown that GaAs/GaAs stripe Roof-Top-Reflector LD is better than cleaved mirror LD by numerical analysis. And surface light emitting device is developed by LPE melt-back growth, which is of good controllability for OEIC. OEIC transmitter using RTR LD structured device and FET has been made and modulated, expected to show good modulation characteristics after solving process problem. Beam-Lead LD mounted on Si carrier has been made and shows low heat-resistance and so long life and good characteristics of LD.