RF Sputter 방법으로 제조한 ZnO:Ga 박막의 전기 및 광학적 특성

ELECTRICAL AND OPTICAL PROPERTIES OF RF SPUTTERED AND Ga-DOPED ZINC OXIDE THIN FILMS

Thin films of undoped and Ga-doped zinc oxide have been prepared by rf sputtering. The films deposited on substrates, which have a columnar structure with the c-axis perpendicular to the substrate surface, consist of very small crystal grains (500-1000 ${\AA}$). Considering doping effects, the electrical resistivity of Ga-doped films decreased by an order of $10^3$ compared to undoped films and the optical transmission was above 80% in the visible range and the optical band gap widened as the Ga content increased.