A Study on the passivation of Si by Thermal Ammonia Nitroxide

Nitoxide막에 의한 표면 불활성화에 관한 연구

Nitroxide films were made from the $NH_3$ gas nitridation of as-grown $SiO_2$. The electrical characterization results including C-V characteristics and BT stress generally indicate that the high field stress instability and insulator-substrate interfacial characteristics are improved by nitridation of $SiO_2$. A C-V technique was used to determine the surface state density $N_{55}$ and then $N_{55}$ in the nitroxide-substrate interface was $8{\times}10(/eVcm^2$). This $N_{55}$ is related with 1/f noise was revealed experimentally and relationship was plotted and 1/f noise characteristics were also improved by nitridation of of $SiO_2$By the results of measurements on these films show that very thin thermal silicon nitroxide films can be used as gate dielectrics for future highly scaled-down VLSI device.