Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1988.11a
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- Pages.199-202
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- 1988
A Study on the Characteristics of TRIODE Etching
TRIODE 장치를 이용한 건식 식각 특성에 관한 연구
- Shin, Jae-Yeol (Electrical Engineering, Seoul National University) ;
- Whang, Ki-Woong (Electrical Engineering, Seoul National University)
- Published : 1988.11.25
Abstract
TRIODE etching characteristics are studied. 13.56 MHz is applied to the Lower electrode and 100 KHz to the upper electrode. Wafers are etched on the lower electrode and we investigate their characteristics and compare then with those of RIE. It shows TRIODE etch rate is much higher than that of RIE but the surface is more contaminated.
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