한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1988년도 추계학술대회 논문집
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- Pages.95-97
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- 1988
게이트 금속 변화에 의한 MOS 소자의 C-V 특성
C-V Characteristics of The MOS Devices by Using different Gate Metals
초록
The instability of MOS devices is mainly caused by the oxide charges, and as the need to develop the gate metal grows researches for various new metal gate have been performed, and in these researches, the difference work function existing between the metal and the semiconductor should be considered. Here int his paper, the device is made by the sputtering and the LPCVD method using pure Al, compound metal. poly-si, as a gate metal, the result of the research was shown that the work function difference from using different gate metals effects on the flatband voltage shift. This means we can infer that the threshold voltage adjustment is possible by using different gate metals and this whole mechanism makes the devices behavior more stable.
키워드