한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1988년도 추계학술대회 논문집
- /
- Pages.79-81
- /
- 1988
다결정 실리콘을 게이트로 이용한 MOS 소자의 전기적 특성에 관한 연구
A Study on the Electrical Characteristics of Poly-Si Gate MOS Devices
초록
The capacitance-voltage (C-V) characteristics of poly-Si gate MOS devices fabricated by Low-Pressure Chemical Vapor Deposition (LPCVD) system have been studied. In the case poly-Si gate, work function difference and surface state charge density was found lower than that of Al gate. This fact was identified from the C-V curves that flatband shift was shown small due to the hydrogen gas diffused into oxide in processing of alloy and the annealing effect in processing of poly-Si deposition.
키워드