Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1988.07a
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- Pages.781-784
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- 1988
A Study on the Formation and Properties of Porous Silicon
다공질 실리콘의 형성과 특성에 관한 연구
- Sung, Yung-Kwon (Dept. of Electrical Eng., Korea University) ;
- Choi, Bok-Gil (Dept. of Electrical Eng., Korea University) ;
- Kim, Sang-Young (Dept. of Electrical Eng., Korea University)
- Published : 1988.07.01
Abstract
The formation and properties of porous silicon layer(PSL) formed by anodic reaction in hydrofluoric acid solution have been studied. Many micropores are formed randomly inside of PSL and the anodization is achieved uniformly-toward the thickness direction. Current density, resistivity and HF concentration in P-type PSL formation are found to play important roles in determining the formation and properties of PSL.
Keywords