Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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A New Annealing Method.

새로운 Annealing 방법

  • 홍순관 (서울시립대학교 전자공학과) ;
  • 박선우 (현대전자 반도체 연구소) ;
  • 김철주 (서울시립대학교 전자공학과)
  • Published : 1988.07.01
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Abstract

We suggest a new annealing method for stabilization of $Si-SiO_2$ interface state in MOS device using $NH_3$(10%) + $N_2$(90%) ambient gases. The annealing effect was examined through C-V characteristics, threshold voltage, effective mobility on channel, respectively. The experimental result show that the new method is available to improvement of MOS device characteristics.

Keywords