Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

New NH-O Oxidation method (II)-For the Electrical properties of Device.

새로운 $NH_{3}-O_{2}$ 산화 방법(II)-소자의 전기적 특성

  • 정성안 (서울시립대학 전자공학과) ;
  • 박선우 (현대전자 반도체연구소) ;
  • 김철주 (서울시립대학 전자공학과)
  • Published : 1988.07.01
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Abstract

A new $NH_{3}-O_{2}$ oxidation method was estimated by the electrical properties of the fabricated n-MOS transistor. For the C-V characteristic curves the Qox are almost equal to Qss and no hysteresis phenomena are observed. The Id-Vds characteristics show that $NH_{3}-O_{2}$ oxidation method is superior to Dry oxidation.

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