대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

새로운 $NH_{3}-O_{2}$ 산화 방법(1) - 매카니즘 및 결정성

A New $NH_{3}-O_{2}$Oxidation Method (1) - Mechanism and Crystal Properties

  • 복은경 (서울시립대학교 전자공학과) ;
  • 박선우 (현대전자반도체연구소) ;
  • 김철주 (서울시립대학교 전자공학과)
  • 발행 : 1988.07.01
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초록

The new oxidation method was presented to grow the oxide layer by thermal reaction of $NH_{3}$ and $O_{2}$. The growth rate increased according as increase of partial pressure of $NH_{3}$. Optical transparent of the grown film was 12% compared with 17% of thermal oxidation when the wave number was $1,100cm^{-1}$. The oxide layer with good quaility was obtained.

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