대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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- Pages.518-520
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- 1987
선택적 액상 Epitaxy를 이용한 매립형 Schottky 다이오드의 제작
Fabrication of buried Schottky diode by selective LPE
- Chung, Gi-Oong (Dept. of Electrical Engineering, KAIST) ;
- Kwon, Young-Se (Dept. of Electrical Engineering, KAIST)
- 발행 : 1987.11.20
초록
The semiconductor-metal-semiconductor structure is considered to be promising for high speed electronic devices. To realize this, the selective LPE and the proper design of epitaxial mask were adopted. Enhanced As diffusion made it possible to grow GaAs over W on GaAs. Buried W Schottky diode was fabricated and the rectifying I-Y characteristics were obtained.
키워드