Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1987.11a
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- Pages.518-520
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- 1987
Fabrication of buried Schottky diode by selective LPE
선택적 액상 Epitaxy를 이용한 매립형 Schottky 다이오드의 제작
- Chung, Gi-Oong (Dept. of Electrical Engineering, KAIST) ;
- Kwon, Young-Se (Dept. of Electrical Engineering, KAIST)
- Published : 1987.11.20
Abstract
The semiconductor-metal-semiconductor structure is considered to be promising for high speed electronic devices. To realize this, the selective LPE and the proper design of epitaxial mask were adopted. Enhanced As diffusion made it possible to grow GaAs over W on GaAs. Buried W Schottky diode was fabricated and the rectifying I-Y characteristics were obtained.
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