Degradation and hole formation of the Te-based thin films

Te을 기본으로 한 박막에서의 열화와 미세구멍형성에 관한 연구

  • 이현용 (광운대학 전자재료공학과) ;
  • 박태성 (광운대학 전자재료공학과) ;
  • 엄정호 (광운대학 전자재료공학과) ;
  • 이영종 (광운대학 전자재료공학과) ;
  • 정홍배 (광운대학 전자재료공학과)
  • Published : 1987.11.20

Abstract

This paper reports the effect of additive elements such as Bi, Sb on degradation and hole formation of the Te-Se thin films. Changes in light transmission were used to monitor the degradation rate of thin Te films in an accelerated temperature-humidity environment. In thin accelerated temperature-humidity environment, $(Te_{86}Se_{14})_{70}Bi_{30}$ thin film was stable and $(Te_{86}Se_{14})_{50}Sb_{50}$ thin film was unstable in comparison with the other films that used in this experiment. The hole formation was carried out in the Te-based thin films.

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