Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1987.07a
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- Pages.775-778
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- 1987
Temperature Measurement by $V_{GS}$ and $V_{DS}$ Method of Power VDMOSFET.
전력 VDMOSFT의 $V_{GS}$ 와 $V_{DS}$ 전압 검출에 의한 온도측정
- Kim, Jae-Hyun (CHO-SUN University) ;
- Lee, Woo-Sun (CHO-SUN University) ;
- Chung, Hun-Sang (CHO-SUN University) ;
- Yoon, Byung-Do (CHUNG-ANG University)
- Published : 1987.07.03
Abstract
Double-diffused metal oxide power semiconductor field effect transistors are used extensively in recent years in various circuit applications. The temperature variation of the drain current at a fixed bais shows both positive and negative resistance characteristics depending on the gate threhold voltage and gate-to source bias voltage. In this study, the decision method of the internal temperature measurement by
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