A Study on the Sheet Resistance Variation in Ion Implanted Poly-Si Thin Flim by CO2 Laser Annealing

CO2 레이저 열처리에 따른 이온 주입된 다결정 실리콘 박막의 판막저항 변화에 관한 연구

  • 박병황 (서강 대학교 전자 공학과) ;
  • 안철 (서강 대학교 전자 공학과)
  • Published : 1987.07.03

Abstract

P+ ion implanted poly-Si flim with doses of 10E13-10E16 ions/$cm^2$ were annealed by CO2 laser and their sheet resistances were measured and compared with thoses of furnace annealed samples. In case of lightly doped samples, the measured sheet resistance of laser annealed samples were lower several orders of magnitude than those of furnace annealed samples. The origin of this reduction of sheet resistances is supposed to be the increase of the grain size to the extent of certain critical value.

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