대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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- Pages.513-516
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- 1987
Remote Plasma Enhanced CVD에 의한 수소화된 비정질 실리콘 박막의 제작 및 특성연구
Fabrication and Characterization of a-Si:H Films by a Remote Plasma Enhanced CVD
- Yang, Young-Sik (Dept. of Physics & Research Institute for Basic Science Kyung Hee University) ;
- Yoon, Yeer-Jean (Dept. of Physics & Research Institute for Basic Science Kyung Hee University) ;
- Jang, Jin (Dept. of Physics & Research Institute for Basic Science Kyung Hee University)
- 발행 : 1987.07.03
초록
Hydrogenated amorphous silicon (a-Si:H) films have been deposited, for thye first time, by a remote plasma chemical vapor deposition. The hydrogen radical play a important role to control the deposition rate, The bonded hydrogen content to silicon is independent of hydrogen partial pressure in the plasma. Optical gap of deposited a-Si:H lies between 1.7eV and 1.8eV and all samples have sharp absorption edge. B-doped a-Si:H films by a RPECVD has a high doping efficiency compared with plasma CVD. The Fermi level of 100ppm B-doped film lies at 0.5eV above valence band edge.
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