대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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- Pages.465-468
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- 1987
$Al_xGa_{1-x}As$ -GaAs 이종접합에서 deep donor level 이 interface electron density에 미치는 영향
Effect of the Deep Donor Level on the Interface Electron Density
- Nam, Seaung-Hyun (Dept. of Electronic Engineering, Yonsei University) ;
- Jung, Hak-Kee (Dept. of Electronic Engineering, Yonsei University) ;
- Lee, Moon-Key (Dept. of Electronic Engineering, Yonsei University) ;
- Kim, Bong-Ryul (Dept. of Electronic Engineering, Yonsei University)
- 발행 : 1987.07.03
초록
This paper describes a model to calculate the equilibrium electron density of MODFET at the interface that takes into account the simultaneous shallow and deep level in the Al-GaAs layer. In the present study we have made an investigation of the interface electron density with different values of the AlGaAs doping density and spacer layer thickness, considering simultaneously two doner levels. In this case, the ratio of the shallow to the deep donor concentraction is considered. From the comparison with early experimental results we could find the deep level and that the deep donor concentration is about 50% with the Al mole fraction X
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