한국통신학회:학술대회논문집 (Proceedings of the Korean Institute of Communication Sciences Conference)
- 한국통신학회 1986년도 춘계학술발표회 논문집
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- Pages.206-210
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- 1986
삼중이온 주입기술에 의한 GaAs Varactor diode의 설계
초록
Double Ion Implantation methods are used to improve the stiffness os carrier profiles, and then the analytical solutions to Poisson`s equation are derived with summation of each carrier profile. Numerical analyses are done using profer boudary conditions and the results show that the improvement of voltage-dependent-capacitance ratio (C(!)/C(25)) is obtained up to B.6. The third ion implantation is for the enhancement of the Schottky barrier height.
키워드